| PART |
Description |
Maker |
| KBE00S009M-D411 KBE00S009M-D4110 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W988D6FB |
(W988D2FB / W988D6FB) 256Mb Mobile LPSDR
|
Winbond
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| W948D6FBHX6E |
256Mb Mobile LPDDR
|
Winbond
|
| PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm
256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
